IXFK160N30T

Power Field-Effect Transistor, 160A I(D), 300V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC, TO-264, 3 PIN

PackageTO-264-3

MountingThrough Hole

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Ixys IXFK160N30T technical specifications.

Package/Case	TO-264-3
Continuous Drain Current (ID)	160A
Drain to Source Voltage (Vdss)	300V
Drain-source On Resistance-Max	19MR
Input Capacitance	28nF
Lead Free	Lead Free
Max Power Dissipation	1.39kW
Mount	Through Hole
Package Quantity	25
Packaging	Rail/Tube
Rds On Max	19mR
RoHS Compliant	Yes
Series	GigaMOS™

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.