Ixys
IXFK170N10
Power Field-Effect Transistor, 170A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC PACKAGE-3
Power Field-Effect Transistor, 170A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC PACKAGE-3
PackageTO-264-3
MountingThrough Hole
PolarityN-CHANNEL
Power560W
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Technical Specifications
Ixys IXFK170N10 technical specifications.
General
| Package/Case | TO-264-3 |
| Continuous Drain Current (ID) | 170A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 10mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 10mR |
| Fall Time | 79ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 10.3nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 560W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 560W |
| Rds On Max | 10mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 158ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFK170N10 Datasheet
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