N-Channel Power MOSFET, 100V Vds, 170A Continuous Drain Current (ID), and 9mΩ Max Drain-Source On-Resistance (Rds On). This silicon, metal-oxide semiconductor FET features a TO-264 package for through-hole mounting, a maximum power dissipation of 715W, and operates within a temperature range of -55°C to 175°C. Key electrical characteristics include a 5V nominal gate-source voltage (Vgs) and a 33ns fall time. This component is RoHS compliant.
PackageTO-264
MountingThrough Hole
PolarityN-CHANNEL
Power714W
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Technical Specifications
Ixys IXFK170N10P technical specifications.
General
| Package/Case | TO-264 |
| Continuous Drain Current (ID) | 170A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 9mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 10mR |
| Dual Supply Voltage | 100V |
| Fall Time | 33ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 6nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 715W |
| Mount | Through Hole |
| Nominal Vgs | 5V |
| Number of Elements | 1 |
| Package Quantity | 25 |
| Packaging | Box |
| Polarity | N-CHANNEL |
| Power Dissipation | 714W |
| Radiation Hardening | No |
| Rds On Max | 9mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HiPerFET™, PolarP2™ |
| Termination | Through Hole |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 90ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFK170N10P Datasheet
Download the complete datasheet for Ixys IXFK170N10P to view detailed technical specifications.
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