N-Channel Power MOSFET, 200V Drain-to-Source Voltage (Vdss), 170A Continuous Drain Current (ID). Features low 11mΩ Rds On, 19.6nF input capacitance, and 1.15kW maximum power dissipation. Through-hole mounting in a TO-264-3 package. Lead-free and RoHS compliant.
PackageTO-264-3
MountingThrough Hole
Quick Jump:
Chat with Datasheet
Sponsored by
Sign in to ask questions about the Ixys IXFK170N20T datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Technical Specifications
Ixys IXFK170N20T technical specifications.
General
| Package/Case | TO-264-3 |
| Continuous Drain Current (ID) | 170A |
| Drain to Source Voltage (Vdss) | 200V |
| Input Capacitance | 19.6nF |
| Lead Free | Lead Free |
| Max Power Dissipation | 1.15kW |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Rds On Max | 11mR |
| RoHS Compliant | Yes |
| Series | GigaMOS™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFK170N20T Datasheet
Download the complete datasheet for Ixys IXFK170N20T to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.