N-Channel Power MOSFET, 200V Drain-to-Source Voltage (Vdss), 170A Continuous Drain Current (ID). Features low 11mΩ Rds On, 19.6nF input capacitance, and 1.15kW maximum power dissipation. Through-hole mounting in a TO-264-3 package. Lead-free and RoHS compliant.
PackageTO-264-3
MountingThrough Hole
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Technical Specifications
Ixys IXFK170N20T technical specifications.
General
| Package/Case | TO-264-3 |
| Continuous Drain Current (ID) | 170A |
| Drain to Source Voltage (Vdss) | 200V |
| Input Capacitance | 19.6nF |
| Lead Free | Lead Free |
| Max Power Dissipation | 1.15kW |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Rds On Max | 11mR |
| RoHS Compliant | Yes |
| Series | GigaMOS™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFK170N20T Datasheet
Download the complete datasheet for Ixys IXFK170N20T to view detailed technical specifications.
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