IXFK180N10

N-Channel Power MOSFET featuring 180A continuous drain current and 100V drain-to-source breakdown voltage. This silicon Metal-oxide Semiconductor FET offers a low 8mΩ drain-to-source resistance. Designed for through-hole mounting in a TO-264AA plastic package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 560W. Key electrical characteristics include a 20V gate-to-source voltage and 10.9nF input capacitance.