N-Channel Power MOSFET featuring 180A continuous drain current and 100V drain-to-source breakdown voltage. This silicon Metal-oxide Semiconductor FET offers a low 8mΩ drain-to-source resistance. Designed for through-hole mounting in a TO-264AA plastic package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 560W. Key electrical characteristics include a 20V gate-to-source voltage and 10.9nF input capacitance.
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| Package/Case | TO-264AA |
| Continuous Drain Current (ID) | 180A |
| Current Rating | 180A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 8mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 65ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 10.9nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 560W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 560W |
| Radiation Hardening | No |
| Rds On Max | 8mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 140ns |
| DC Rated Voltage | 100V |
| RoHS | Compliant |
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