N-Channel Power MOSFET, 250V Drain-Source Voltage, 180A Continuous Drain Current. Features low 12.9mΩ maximum on-resistance and 28nF input capacitance. Designed for high power applications with a maximum power dissipation of 1.39kW. Packaged in a TO-264-3 through-hole mount, lead-free, and RoHS compliant.
PackageTO-264-3
MountingThrough Hole
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Technical Specifications
Ixys IXFK180N25T technical specifications.
General
| Package/Case | TO-264-3 |
| Continuous Drain Current (ID) | 180A |
| Drain to Source Voltage (Vdss) | 250V |
| Drain-source On Resistance-Max | 8MR |
| Input Capacitance | 28nF |
| Lead Free | Lead Free |
| Max Power Dissipation | 1.39kW |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Rds On Max | 12.9mR |
| RoHS Compliant | Yes |
| Series | GigaMOS™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFK180N25T Datasheet
Download the complete datasheet for Ixys IXFK180N25T to view detailed technical specifications.
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