Ixys
IXFK20N80Q
Power Field-Effect Transistor, 20A I(D), 800V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC PACKAGE-3
PackageTO-264AA
MountingThrough Hole
PolarityN-CHANNEL
Power360W
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Technical Specifications
Ixys IXFK20N80Q technical specifications.
General
Package/Case
TO-264AA
Continuous Drain Current (ID)
20A
Drain to Source Breakdown Voltage
800V
Drain to Source Resistance
420mR
Drain to Source Voltage (Vdss)
800V
Drain-source On Resistance-Max
420mR
Fall Time
14ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
5.1nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
360W
Mount
Through Hole
Number of Elements
1
Package Quantity
25
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
360W
Rds On Max
420mR
RoHS Compliant
Yes
Series
HiPerFET™
Turn-Off Delay Time
74ns
Compliance
RoHS
Compliant
Datasheet
Ixys IXFK20N80Q Datasheet
Download the complete datasheet for Ixys IXFK20N80Q to view detailed technical specifications.
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