The IXFK20N80Q is a high-power N-channel MOSFET with a maximum operating temperature range of -55°C to 150°C. It features a drain to source breakdown voltage of 800V and a continuous drain current of 20A. The device has a maximum power dissipation of 360W and a gate to source voltage of 20V. It is packaged in a TO-264AA flange mount package and is RoHS compliant.
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| Package/Case | TO-264AA |
| Continuous Drain Current (ID) | 20A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 420mR |
| Drain to Source Voltage (Vdss) | 800V |
| Drain-source On Resistance-Max | 420mR |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 5.1nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 360W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 360W |
| Rds On Max | 420mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 74ns |
| RoHS | Compliant |
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