The IXFK21N100Q is a high-power N-channel MOSFET with a maximum drain to source breakdown voltage of 1kV and a continuous drain current of 21A. It features a drain to source resistance of 500mR and a maximum power dissipation of 500W. The device is packaged in a TO-264-3 plastic package and is suitable for through-hole mounting. The IXFK21N100Q operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations.
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| Package/Case | TO-264-3 |
| Continuous Drain Current (ID) | 21A |
| Drain to Source Breakdown Voltage | 1kV |
| Drain to Source Resistance | 500mR |
| Drain to Source Voltage (Vdss) | 1kV |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 6.9nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 500W |
| Rds On Max | 500mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 60ns |
| RoHS | Compliant |
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