N-channel silicon MOSFET featuring 200V drain-source breakdown voltage and 230A continuous drain current. This power field-effect transistor offers a low 7.5mΩ drain-source resistance (Rds On Max) and a maximum power dissipation of 1.67kW. Designed for through-hole mounting in a TO-264-3 package, it operates across a temperature range of -55°C to 175°C and is lead-free and RoHS compliant.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Ixys IXFK230N20T datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | TO-264-3 |
| Continuous Drain Current (ID) | 230A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 7.5mR |
| Drain to Source Voltage (Vdss) | 200V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 28nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.67kW |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.67kW |
| Rds On Max | 7.5mR |
| RoHS Compliant | Yes |
| Series | GigaMOS™ |
| RoHS | Compliant |
Download the complete datasheet for Ixys IXFK230N20T to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
