The IXFK24N100F is a high-power N-channel MOSFET with a maximum operating temperature range of -55°C to 150°C. It features a continuous drain current of 24A and a drain to source breakdown voltage of 1kV. The device has a maximum power dissipation of 560W and is packaged in a TO-264-3 flange mount package. The IXFK24N100F is RoHS compliant and is part of the HiPerRF series.
PackageTO-264-3
PolarityN-CHANNEL
Power560W
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Technical Specifications
Ixys IXFK24N100F technical specifications.
General
| Package/Case | TO-264-3 |
| Continuous Drain Current (ID) | 24A |
| Drain to Source Breakdown Voltage | 1kV |
| Drain to Source Resistance | 390mR |
| Drain to Source Voltage (Vdss) | 1kV |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 6.6nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 560W |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 560W |
| Rds On Max | 390mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HiPerRF™ |
| Turn-Off Delay Time | 52ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFK24N100F Datasheet
Download the complete datasheet for Ixys IXFK24N100F to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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