N-Channel Power MOSFET featuring 1000V drain-source breakdown voltage and 24A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 0.44-ohm Rds On resistance and a maximum power dissipation of 1kW. Designed for through-hole mounting in a TO-264 package, it operates across a wide temperature range from -55°C to 150°C. Key electrical characteristics include 7.2nF input capacitance and fast switching times with a 38ns turn-on and 45ns turn-off delay. This RoHS compliant component is supplied in a rail/tube package.
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| Package/Case | TO-264 |
| Continuous Drain Current (ID) | 24A |
| Drain to Source Breakdown Voltage | 1kV |
| Drain to Source Resistance | 440mR |
| Drain to Source Voltage (Vdss) | 1kV |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 26.16mm |
| Input Capacitance | 7.2nF |
| Lead Free | Lead Free |
| Length | 19.96mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1kW |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 1kW |
| Rds On Max | 440mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 38ns |
| Width | 5.13mm |
| RoHS | Compliant |
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