Ixys
IXFK24N80P
Power Field-Effect Transistor, 24A I(D), 800V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC PACKAGE-3
Power Field-Effect Transistor, 24A I(D), 800V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC PACKAGE-3
PackageTO-264-3
MountingThrough Hole
PolarityN-CHANNEL
Power650W
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Technical Specifications
Ixys IXFK24N80P technical specifications.
General
| Package/Case | TO-264-3 |
| Continuous Drain Current (ID) | 24A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 400mR |
| Drain to Source Voltage (Vdss) | 800V |
| Fall Time | 24ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 7.2nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 650W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 650W |
| Rds On Max | 400mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™, PolarHT™ |
| Turn-Off Delay Time | 75ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFK24N80P Datasheet
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