N-Channel Power MOSFET, 1000V Vdss, 32A Continuous Drain Current (ID). Features 320mR Rds On Max, 1.25kW Max Power Dissipation, and 150°C Max Operating Temperature. Silicon Metal-oxide Semiconductor FET in a TO-264 package, suitable for through-hole mounting. Includes 45ns turn-on and 54ns turn-off delay times. RoHS compliant and lead-free.
PackageTO-264
MountingThrough Hole
PolarityN-CHANNEL
Power1.25kW
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Technical Specifications
Ixys IXFK32N100Q3 technical specifications.
General
| Package/Case | TO-264 |
| Continuous Drain Current (ID) | 32A |
| Drain to Source Breakdown Voltage | 1kV |
| Drain to Source Resistance | 320mR |
| Drain to Source Voltage (Vdss) | 1kV |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 26.16mm |
| Input Capacitance | 9.94nF |
| Lead Free | Lead Free |
| Length | 19.96mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.25kW |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.25kW |
| Rds On Max | 320mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 54ns |
| Turn-On Delay Time | 45ns |
| Width | 5.13mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFK32N100Q3 Datasheet
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