N-Channel Power MOSFET featuring 500V drain-source breakdown voltage and 32A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 0.15ohm drain-source resistance and a maximum power dissipation of 416W. Designed for through-hole mounting, it utilizes a TO-264AA plastic package and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a fall time of 20ns, turn-on delay of 35ns, and turn-off delay of 75ns.
PackageTO-264AA
MountingThrough Hole
PolarityN-CHANNEL
Power416W
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Technical Specifications
Ixys IXFK32N50Q technical specifications.
General
| Package/Case | TO-264AA |
| Continuous Drain Current (ID) | 32A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 160mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 26.16mm |
| Input Capacitance | 3.95nF |
| Length | 19.96mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 416W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 416W |
| Rds On Max | 160mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 75ns |
| Turn-On Delay Time | 35ns |
| Width | 5.13mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFK32N50Q Datasheet
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