
N-Channel Power MOSFET featuring 500V drain-source breakdown voltage and 32A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 0.15ohm drain-source resistance and a maximum power dissipation of 416W. Designed for through-hole mounting, it utilizes a TO-264AA plastic package and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a fall time of 20ns, turn-on delay of 35ns, and turn-off delay of 75ns.
Sign in to ask questions about the Ixys IXFK32N50Q datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Ixys IXFK32N50Q technical specifications.
| Package/Case | TO-264AA |
| Continuous Drain Current (ID) | 32A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 160mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 26.16mm |
| Input Capacitance | 3.95nF |
| Length | 19.96mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 416W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 416W |
| Rds On Max | 160mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 75ns |
| Turn-On Delay Time | 35ns |
| Width | 5.13mm |
| RoHS | Compliant |
Download the complete datasheet for Ixys IXFK32N50Q to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
