The IXFK35N50 is a high-power N-channel power MOSFET with a maximum operating temperature range of -55°C to 150°C. It features a drain to source breakdown voltage of 500V and a continuous drain current of 35A. The device has a maximum power dissipation of 416W and a drain to source resistance of 150mR. It is packaged in a TO-264-3 package and is available in a rail/tube packaging configuration. The IXFK35N50 is RoHS compliant and is part of the HiPerFET series.
PackageTO-264-3
MountingThrough Hole
PolarityN-CHANNEL
Power416W
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Technical Specifications
Ixys IXFK35N50 technical specifications.
General
| Package/Case | TO-264-3 |
| Continuous Drain Current (ID) | 35A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 150mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 23ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 5.7nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 416W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 416W |
| Rds On Max | 150mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 110ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFK35N50 Datasheet
Download the complete datasheet for Ixys IXFK35N50 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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