N-Channel Power MOSFET, 150V Vdss, 360A Continuous Drain Current (ID). Features 4mΩ maximum drain-source on-resistance (Rds On Max) and 1.67kW maximum power dissipation. Operates from -55°C to 175°C with a 265ns fall time, 50ns turn-on delay, and 115ns turn-off delay. Through-hole mounting in a TO-264-3 package. RoHS compliant and lead-free.
PackageTO-264-3
Current100A
MountingThrough Hole
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Technical Specifications
Ixys IXFK360N15T2 technical specifications.
General
| Package/Case | TO-264-3 |
| Continuous Drain Current (ID) | 360A |
| Drain to Source Voltage (Vdss) | 150V |
| Drain-source On Resistance-Max | 4MR |
| Fall Time | 265ns |
| Input Capacitance | 47.5nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.67kW |
| Mount | Through Hole |
| Number of Drivers | 1 |
| Number of Outputs | 1 |
| Output Current | 360A |
| Output Voltage | 150V |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Rds On Max | 4mR |
| RoHS Compliant | Yes |
| Series | GigaMOS™ |
| Supply Current | 100A |
| Turn-Off Delay Time | 115ns |
| Turn-On Delay Time | 50ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFK360N15T2 Datasheet
Download the complete datasheet for Ixys IXFK360N15T2 to view detailed technical specifications.
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