N-Channel Power MOSFET featuring 600V drain-source breakdown voltage and 36A continuous drain current. This silicon Metal-Oxide Semiconductor FET offers a low 0.18ohm drain-source resistance (Rds On Max) and a maximum power dissipation of 500W. Designed for through-hole mounting in a TO-264 package, it operates across a temperature range of -55°C to 150°C. Key electrical characteristics include a 4.5V threshold voltage and 9nF input capacitance.
PackageTO-264-3
Current Rating36A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Ixys IXFK36N60 technical specifications.
General
| Package/Case | TO-264-3 |
| Continuous Drain Current (ID) | 36A |
| Current Rating | 36A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 180mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 60ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 9nF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 500W |
| Rds On Max | 180mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Threshold Voltage | 4.5V |
| Turn-Off Delay Time | 100ns |
| DC Rated Voltage | 600V |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFK36N60 Datasheet
Download the complete datasheet for Ixys IXFK36N60 to view detailed technical specifications.
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