N-Channel Power MOSFET featuring 600V drain-source breakdown voltage and 36A continuous drain current. This silicon Metal-Oxide Semiconductor FET offers a low 0.18ohm drain-source resistance (Rds On Max) and a maximum power dissipation of 500W. Designed for through-hole mounting in a TO-264 package, it operates across a temperature range of -55°C to 150°C. Key electrical characteristics include a 4.5V threshold voltage and 9nF input capacitance.
PackageTO-264-3
Current Rating36A
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Chat with Datasheet
Sponsored by
Sign in to ask questions about the Ixys IXFK36N60 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Technical Specifications
Ixys IXFK36N60 technical specifications.
General
| Package/Case | TO-264-3 |
| Continuous Drain Current (ID) | 36A |
| Current Rating | 36A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 180mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 60ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 9nF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 500W |
| Rds On Max | 180mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Threshold Voltage | 4.5V |
| Turn-Off Delay Time | 100ns |
| DC Rated Voltage | 600V |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFK36N60 Datasheet
Download the complete datasheet for Ixys IXFK36N60 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
Product Images
