IXFK44N50

Datasheet

Power Field-Effect Transistor, 44A I(D), 500V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264, TO-264, 3 PIN

Ixys

IXFK44N50

Name: IXFK44N50 Ixys
Brand: Ixys
SKU: IXFK44N50

Power Field-Effect Transistor, 44A I(D), 500V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264, TO-264, 3 PIN

PackageTO-264-3

Current Rating44A

MountingThrough Hole

PolarityN-CHANNEL

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Technical Specifications

Ixys IXFK44N50 technical specifications.

General

Package/Case	TO-264-3
Continuous Drain Current (ID)	44A
Current Rating	44A
Drain to Source Breakdown Voltage	500V
Drain to Source Resistance	120mR
Drain to Source Voltage (Vdss)	500V
Fall Time	30ns
Gate to Source Voltage (Vgs)	20V
Input Capacitance	8.4nF
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	500W
Mount	Through Hole
Package Quantity	25
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	500W
Rds On Max	120mR
RoHS Compliant	Yes
Series	HiPerFET™
Turn-Off Delay Time	100ns
DC Rated Voltage	500V