N-Channel Power MOSFET featuring 500V drain-source breakdown voltage and 44A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 0.14ohm drain-source on-resistance and a maximum power dissipation of 650W. Designed for through-hole mounting in a TO-264 package, it operates within a temperature range of -55°C to 150°C. Key electrical characteristics include a 27ns fall time and 85ns turn-off delay time.
PackageTO-264
Current Rating44A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Ixys IXFK44N50P technical specifications.
General
| Package/Case | TO-264 |
| Continuous Drain Current (ID) | 44A |
| Current Rating | 44A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 140mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 140MR |
| Fall Time | 27ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 5.44nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 650W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 650W |
| Rds On Max | 140mR |
| RoHS Compliant | Yes |
| Series | PolarHV™ HiPerFET™ |
| Turn-Off Delay Time | 85ns |
| DC Rated Voltage | 500V |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFK44N50P Datasheet
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