N-Channel Power MOSFET, 800V Vdss, 44A continuous drain current, and 190mΩ Rds On. Features a 1.04kW maximum power dissipation and operates within a -55°C to 150°C temperature range. This silicon Metal-oxide Semiconductor FET is housed in a TO-264 package with through-hole mounting. Includes a 5V threshold voltage and 27ns fall time.
PackageTO-264
MountingThrough Hole
PolarityN-CHANNEL
Power1.2kW
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Technical Specifications
Ixys IXFK44N80P technical specifications.
General
| Package/Case | TO-264 |
| Continuous Drain Current (ID) | 44A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 190mR |
| Drain to Source Voltage (Vdss) | 800V |
| Drain-source On Resistance-Max | 190MR |
| Fall Time | 27ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 12nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.04kW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.2kW |
| Radiation Hardening | No |
| Rds On Max | 190mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HiPerFET™, PolarHT™ |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 75ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFK44N80P Datasheet
Download the complete datasheet for Ixys IXFK44N80P to view detailed technical specifications.
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