The IXFK55N50F is a high-power N-channel MOSFET with a drain to source breakdown voltage of 500V and a continuous drain current of 55A. It features a drain to source resistance of 85 milliohms and a fall time of 9.6 nanoseconds. The device is packaged in a TO-264AA flange mount package and is lead free. It operates over a temperature range of -55°C to 150°C and is RoHS compliant.
PackageTO-264AA
PolarityN-CHANNEL
Power560W
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Technical Specifications
Ixys IXFK55N50F technical specifications.
General
| Package/Case | TO-264AA |
| Continuous Drain Current (ID) | 55A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 85mR |
| Fall Time | 9.6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 560W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 45ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFK55N50F Datasheet
Download the complete datasheet for Ixys IXFK55N50F to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.