The IXFK60N25Q is a high-power N-channel MOSFET from Ixys, featuring a maximum operating temperature range of -55°C to 150°C. It has a continuous drain current of 60A and a drain to source breakdown voltage of 250V. The device is packaged in a TO-264-3 flange mount package and is RoHS compliant. It is suitable for high-power applications requiring low on-resistance, with a maximum power dissipation of 360W.
PackageTO-264-3
MountingThrough Hole
PolarityN-CHANNEL
Power360W
Quick Jump:
Technical Specifications
Ixys IXFK60N25Q technical specifications.
General
| Package/Case | TO-264-3 |
| Continuous Drain Current (ID) | 60A |
| Drain to Source Breakdown Voltage | 250V |
| Drain to Source Resistance | 47mR |
| Drain to Source Voltage (Vdss) | 250V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 5.1nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 360W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 360W |
| Rds On Max | 47mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 80ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFK60N25Q Datasheet
Download the complete datasheet for Ixys IXFK60N25Q to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
