N-Channel Power MOSFET featuring 550V drain-source breakdown voltage and 60A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 88mΩ drain-source on-resistance. Designed for through-hole mounting in a TO-264AA package, it boasts a maximum power dissipation of 735W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 22ns turn-on delay and a 9ns fall time.
PackageTO-264AA
MountingThrough Hole
PolarityN-CHANNEL
Power735W
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Technical Specifications
Ixys IXFK60N55Q2 technical specifications.
General
| Package/Case | TO-264AA |
| Continuous Drain Current (ID) | 60A |
| Drain to Source Breakdown Voltage | 550V |
| Drain to Source Resistance | 88mR |
| Drain to Source Voltage (Vdss) | 550V |
| Drain-source On Resistance-Max | 88MR |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 26.16mm |
| Input Capacitance | 7.3nF |
| Lead Free | Lead Free |
| Length | 19.96mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 735W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 735W |
| Rds On Max | 88mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 57ns |
| Turn-On Delay Time | 22ns |
| Width | 5.13mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFK60N55Q2 Datasheet
Download the complete datasheet for Ixys IXFK60N55Q2 to view detailed technical specifications.
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