The IXFK64N50Q3 is a high-power N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a continuous drain current of 64A and a drain to source breakdown voltage of 500V. The device is packaged in a TO-264 plastic package and is RoHS compliant. It has a maximum power dissipation of 1kW and a gate to source voltage of 30V.
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| Package/Case | TO-264 |
| Continuous Drain Current (ID) | 64A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 85mR |
| Drain to Source Voltage (Vdss) | 500V |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 26.16mm |
| Input Capacitance | 6.95nF |
| Length | 19.96mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1kW |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 1kW |
| Rds On Max | 85mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 46ns |
| Turn-On Delay Time | 36ns |
| Width | 5.13mm |
| RoHS | Compliant |
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