N-Channel Power MOSFET, 600V Vds, 64A Continuous Drain Current (ID), and 96mΩ Rds On. Features a 1.04kW Max Power Dissipation and operates within a -55°C to 150°C temperature range. This silicon Metal-Oxide-Semiconductor FET utilizes a TO-264 package for through-hole mounting. Includes a 5V Threshold Voltage and 24ns Fall Time.
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| Package/Case | TO-264 |
| Continuous Drain Current (ID) | 64A |
| Current Rating | 64A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 96mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 24ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 12nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.04kW |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.04kW |
| Rds On Max | 96mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HiPerFET™, PolarHT™ |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 79ns |
| DC Rated Voltage | 600V |
| RoHS | Compliant |
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