N-Channel Power MOSFET, 600V Vds, 64A Continuous Drain Current (ID), and 95mΩ Rds On. This silicon, metal-oxide semiconductor FET features a TO-264 package for through-hole mounting. Key performance characteristics include a maximum power dissipation of 1.13kW, 11ns fall time, 43ns turn-on delay, and 66ns turn-off delay. Operating temperature range is -55°C to 150°C, with lead-free and RoHS compliance.
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| Package/Case | TO-264 |
| Continuous Drain Current (ID) | 64A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 95mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 26.16mm |
| Input Capacitance | 9.9nF |
| Lead Free | Lead Free |
| Length | 19.96mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.13kW |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.13kW |
| Rds On Max | 95mR |
| RoHS Compliant | Yes |
| Series | Polar3™ HiPerFET™ |
| Turn-Off Delay Time | 66ns |
| Turn-On Delay Time | 43ns |
| Width | 5.13mm |
| RoHS | Compliant |
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