The IXFK64N60Q3 is a high-power N-channel MOSFET from Ixys, featuring a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 1.25kW and a continuous drain current of 64A. The device is packaged in a TO-264 plastic package and is RoHS compliant. The IXFK64N60Q3 is suitable for high-power switching applications.
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| Package/Case | TO-264 |
| Continuous Drain Current (ID) | 64A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 95mR |
| Drain to Source Voltage (Vdss) | 600V |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 26.16mm |
| Input Capacitance | 9.93nF |
| Length | 19.96mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.25kW |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.25kW |
| Rds On Max | 95mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 45ns |
| Width | 5.13mm |
| RoHS | Compliant |
Download the complete datasheet for Ixys IXFK64N60Q3 to view detailed technical specifications.
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