N-Channel Power MOSFET, 500V Vds, 66A Continuous Drain Current (ID), and 80mΩ Rds On. This silicon, metal-oxide semiconductor FET features a low 74mΩ drain-to-source resistance and a maximum power dissipation of 735W. Designed for high-efficiency switching applications, it offers fast switching speeds with a 32ns turn-on delay and 10ns fall time. Packaged in a TO-264AA for through-hole mounting, this component operates within a temperature range of -55°C to 150°C and is RoHS compliant.
PackageTO-264AA
MountingThrough Hole
PolarityN-CHANNEL
Power735W
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Technical Specifications
Ixys IXFK66N50Q2 technical specifications.
General
| Package/Case | TO-264AA |
| Continuous Drain Current (ID) | 66A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 74mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 26.16mm |
| Input Capacitance | 8.4nF |
| Length | 19.96mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 735W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 735W |
| Rds On Max | 80mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 32ns |
| Width | 5.13mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFK66N50Q2 Datasheet
Download the complete datasheet for Ixys IXFK66N50Q2 to view detailed technical specifications.
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