The IXFK73N30Q is a high-power N-channel transistor with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a drain to source breakdown voltage of 300V and a continuous drain current of 73A. The device has a maximum power dissipation of 500W and a gate to source voltage of 30V. It is packaged in a TO-264-3 case and is available in a rail/Tube packaging with 25 units per package. The IXFK73N30Q is RoHS compliant and suitable for use in high-power applications.
PackageTO-264-3
MountingThrough Hole
PolarityN-CHANNEL
Power500W
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Technical Specifications
Ixys IXFK73N30Q technical specifications.
General
| Package/Case | TO-264-3 |
| Continuous Drain Current (ID) | 73A |
| Drain to Source Breakdown Voltage | 300V |
| Drain to Source Resistance | 45mR |
| Drain to Source Voltage (Vdss) | 300V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 5.4nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 500W |
| Rds On Max | 45mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 82ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFK73N30Q Datasheet
Download the complete datasheet for Ixys IXFK73N30Q to view detailed technical specifications.
No datasheet is available for this part.
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