N-Channel Power MOSFET, 500V Drain to Source Voltage (Vdss), 78A Continuous Drain Current (ID), and 68mΩ Rds On Max. This silicon Metal-oxide Semiconductor FET features a TO-264 package, through-hole mounting, and a maximum power dissipation of 1.13kW. Operating temperature range is -55°C to 150°C. RoHS compliant and lead-free.
PackageTO-264
MountingThrough Hole
PolarityN-CHANNEL
Power1.13kW
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Technical Specifications
Ixys IXFK78N50P3 technical specifications.
General
| Package/Case | TO-264 |
| Continuous Drain Current (ID) | 78A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 68mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 26.16mm |
| Input Capacitance | 9.9nF |
| Lead Free | Lead Free |
| Length | 19.96mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.13kW |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.13kW |
| Rds On Max | 68mR |
| RoHS Compliant | Yes |
| Series | Polar3™ HiPerFET™ |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 30ns |
| Width | 5.13mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFK78N50P3 Datasheet
Download the complete datasheet for Ixys IXFK78N50P3 to view detailed technical specifications.
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