The IXFK80N20Q is a high-power N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a drain to source breakdown voltage of 200V and a continuous drain current of 80A. The device has a maximum power dissipation of 360W and a drain to source resistance of 28mΩ. It is packaged in a TO-264-3 through-hole package and is RoHS compliant.
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Ixys IXFK80N20Q technical specifications.
| Package/Case | TO-264-3 |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 28mR |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.6nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 360W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 360W |
| Rds On Max | 28mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 75ns |
| RoHS | Compliant |
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