N-Channel Power MOSFET, 500V Drain-Source Breakdown Voltage, 80A Continuous Drain Current, and 65mΩ Max Drain-Source On-Resistance. This silicon Metal-oxide Semiconductor FET features a TO-264 package for through-hole mounting, a maximum power dissipation of 1.04kW, and operates within a temperature range of -55°C to 150°C. Additional specifications include a 16ns fall time, 70ns turn-off delay time, and 12.7nF input capacitance. This RoHS compliant component is designed for high-power applications.
PackageTO-264
Current Rating80A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Ixys IXFK80N50P technical specifications.
General
| Package/Case | TO-264 |
| Continuous Drain Current (ID) | 80A |
| Current Rating | 80A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 65mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 65MR |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 12.7nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.04kW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.04kW |
| Radiation Hardening | No |
| Rds On Max | 65mR |
| RoHS Compliant | Yes |
| Series | PolarHV™ HiPerFET™ |
| Turn-Off Delay Time | 70ns |
| DC Rated Voltage | 500V |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFK80N50P Datasheet
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