N-Channel Power MOSFET featuring 300V drain-source breakdown voltage and 88A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 40mΩ drain-source on-resistance. Designed for through-hole mounting in a TO-264 package, it supports a maximum power dissipation of 600W and operates within a temperature range of -55°C to 150°C. Key electrical characteristics include a 5V threshold voltage and 6.3nF input capacitance.
PackageTO-264
MountingThrough Hole
PolarityN-CHANNEL
Power600W
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Technical Specifications
Ixys IXFK88N30P technical specifications.
General
| Package/Case | TO-264 |
| Continuous Drain Current (ID) | 88A |
| Drain to Source Breakdown Voltage | 300V |
| Drain to Source Resistance | 40mR |
| Drain to Source Voltage (Vdss) | 300V |
| Drain-source On Resistance-Max | 40mR |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 6.3nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 600W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 600W |
| Rds On Max | 40mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HiPerFET™, PolarP2™ |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 96ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFK88N30P Datasheet
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