
N-Channel Power MOSFET, 200V Vds, 90A Continuous Drain Current, 23mΩ Max Drain-Source On-Resistance. Features 500W Max Power Dissipation, 150°C Max Operating Temperature, and 30ns Fall Time. Packaged in a TO-264-3 plastic case with through-hole mounting. RoHS compliant.
Ixys IXFK90N20 technical specifications.
| Package/Case | TO-264-3 |
| Continuous Drain Current (ID) | 90A |
| Current Rating | 90A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 23mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 23MR |
| Dual Supply Voltage | 200V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 9nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 500W |
| Rds On Max | 23mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 75ns |
| DC Rated Voltage | 200V |
| RoHS | Compliant |
Download the complete datasheet for Ixys IXFK90N20 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
