N-channel silicon power MOSFET featuring 200V drain-source breakdown voltage and 90A continuous drain current. This through-hole mounted component offers a low 22mΩ drain-source on-resistance and 500W maximum power dissipation. Designed for high efficiency, it boasts a 12ns fall time and 82ns turn-off delay. Encased in a TO-264AA plastic package, this RoHS compliant device operates from -55°C to 150°C.
PackageTO-264AA
Current Rating90A
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Ixys IXFK90N20Q technical specifications.
General
| Package/Case | TO-264AA |
| Continuous Drain Current (ID) | 90A |
| Current Rating | 90A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 22mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 22MR |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 6.8nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 500W |
| Rds On Max | 22mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 82ns |
| DC Rated Voltage | 200V |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFK90N20Q Datasheet
Download the complete datasheet for Ixys IXFK90N20Q to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
