N-Channel Power MOSFET featuring 500V drain-source breakdown voltage and 98A continuous drain current. This silicon Metal-Oxide-Semiconductor FET offers a low 50mΩ drain-source resistance. Designed for through-hole mounting in a TO-264 package, it boasts a maximum power dissipation of 1.3kW and fast switching characteristics with a 6ns fall time. Operating temperature range is -55°C to 150°C, and it is RoHS compliant.
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Ixys IXFK98N50P3 technical specifications.
| Package/Case | TO-264 |
| Continuous Drain Current (ID) | 98A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 50mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 6ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 26.16mm |
| Input Capacitance | 13.1nF |
| Length | 19.96mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.3kW |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.3kW |
| Rds On Max | 50mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HiPerFET™, Polar3™ |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 65ns |
| Turn-On Delay Time | 35ns |
| Width | 5.13mm |
| RoHS | Compliant |
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