The IXFL38N100P is a high-power N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a drain to source breakdown voltage of 1kV and a continuous drain current of 29A. The device has a maximum power dissipation of 520W and a gate to source voltage of 30V. It is packaged in a plastic, ISOPLUS, I5PAK-3 package and is compliant with RoHS regulations.
MountingThrough Hole
PolarityN-CHANNEL
Power520W
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Technical Specifications
Ixys IXFL38N100P technical specifications.
General
| Continuous Drain Current (ID) | 29A |
| Drain to Source Breakdown Voltage | 1kV |
| Drain to Source Resistance | 230mR |
| Drain to Source Voltage (Vdss) | 1kV |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 24nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 520W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 520W |
| Rds On Max | 230mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™, PolarP2™ |
| Turn-Off Delay Time | 71ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFL38N100P Datasheet
Download the complete datasheet for Ixys IXFL38N100P to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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