Ixys
IXFL44N80
Power Field-Effect Transistor, 44A I(D), 800V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS-264,3 PIN
Power Field-Effect Transistor, 44A I(D), 800V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS-264,3 PIN
MountingThrough Hole
PolarityN-CHANNEL
Power550W
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Technical Specifications
Ixys IXFL44N80 technical specifications.
General
| Continuous Drain Current (ID) | 44A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 165mR |
| Drain to Source Voltage (Vdss) | 800V |
| Fall Time | 24ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 26.42mm |
| Input Capacitance | 10nF |
| Length | 20.29mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 550W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 550W |
| Rds On Max | 165mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 100ns |
| Turn-On Delay Time | 35ns |
| Width | 5.21mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFL44N80 Datasheet
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