The IXFL60N80P is a high-power N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a drain to source breakdown voltage of 800V and a continuous drain current of 40A. The device has a maximum power dissipation of 625W and a drain to source on resistance of 150mR. It is packaged in an ISOPLUS264, 3 PIN package and is available in quantities of 25. The IXFL60N80P is RoHS compliant and suitable for use in high-power applications.
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| Continuous Drain Current (ID) | 40A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 150mR |
| Drain to Source Voltage (Vdss) | 800V |
| Drain-source On Resistance-Max | 150MR |
| Fall Time | 26ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 18nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 625W |
| Rds On Max | 150mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™, PolarHT™ |
| Turn-Off Delay Time | 110ns |
| RoHS | Compliant |
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