The IXFL70N60Q2 is a high-power N-channel MOSFET with a maximum operating temperature range of -55°C to 150°C. It has a maximum power dissipation of 360W and a drain-to-source breakdown voltage of 600V. The device features a continuous drain current of 37A and a drain-to-source resistance of 92mR. It is packaged in a 3-pin ISOPLUS264 package and is RoHS compliant.
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Ixys IXFL70N60Q2 technical specifications.
| Continuous Drain Current (ID) | 37A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 92mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 26.42mm |
| Input Capacitance | 12nF |
| Length | 20.29mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 360W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 360W |
| Rds On Max | 92mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 26ns |
| Width | 5.21mm |
| RoHS | Compliant |
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