The IXFL82N60P is a high-power N-CHANNEL MOSFET with a maximum operating temperature range of -55°C to 150°C. It features a drain to source breakdown voltage of 600V and a continuous drain current of 55A. The device has a maximum power dissipation of 625W and is packaged in a 3-pin ISOPLUS264 package. The IXFL82N60P is RoHS compliant and suitable for high-power applications.
MountingThrough Hole
PolarityN-CHANNEL
Power625W
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Technical Specifications
Ixys IXFL82N60P technical specifications.
General
| Continuous Drain Current (ID) | 55A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 80mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 24ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 23nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 625W |
| Rds On Max | 78mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™, PolarHT™ |
| Turn-Off Delay Time | 79ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFL82N60P Datasheet
Download the complete datasheet for Ixys IXFL82N60P to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.