Ixys
IXFM13N50
Power Field-Effect Transistor, 13A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, TO-204, 2 PIN
Power Field-Effect Transistor, 13A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, TO-204, 2 PIN
PackageTO-204AA
PolarityN-CHANNEL
Power180W
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Technical Specifications
Ixys IXFM13N50 technical specifications.
General
| Package/Case | TO-204AA |
| Continuous Drain Current (ID) | 13A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 400mR |
| Fall Time | 32ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 20 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 180W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 76ns |
Compliance
| RoHS | Compliant |
Datasheet
No datasheet is available for this part.