IXFM20N60

Name: IXFM20N60 Ixys
Brand: Ixys
SKU: IXFM20N60

Power Field-Effect Transistor, 20A I(D), 600V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, TO-204, 2 PIN

PackageTO-204AE

PolarityN-CHANNEL

Power300W

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Ixys IXFM20N60 technical specifications.

Package/Case	TO-204AE
Continuous Drain Current (ID)	20A
Drain to Source Breakdown Voltage	600V
Drain to Source Resistance	350mR
Fall Time	40ns
Gate to Source Voltage (Vgs)	20V
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Package Quantity	20
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	300W
RoHS Compliant	Yes
Turn-Off Delay Time	70ns

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.