The IXFM20N60 is a N-channel MOSFET with a breakdown voltage of 600V and a continuous drain current of 20A. It has a power dissipation of 300W and is packaged in a TO-204AE flange mount. The device operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations. The IXFM20N60 features a drain to source resistance of 350mR and a fall time of 40ns.
PackageTO-204AE
PolarityN-CHANNEL
Power300W
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Technical Specifications
Ixys IXFM20N60 technical specifications.
General
| Package/Case | TO-204AE |
| Continuous Drain Current (ID) | 20A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 350mR |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 20 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 70ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFM20N60 Datasheet
Download the complete datasheet for Ixys IXFM20N60 to view detailed technical specifications.
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