Ixys
IXFM50N20
Power Field-Effect Transistor, 50A I(D), 200V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, TO-204, 2 PIN
Power Field-Effect Transistor, 50A I(D), 200V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, TO-204, 2 PIN
PackageTO-204AE
Current Rating50A
PolarityN-CHANNEL
Power300W
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Technical Specifications
Ixys IXFM50N20 technical specifications.
General
| Package/Case | TO-204AE |
| Continuous Drain Current (ID) | 50A |
| Current Rating | 50A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 45mR |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 20 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 72ns |
| DC Rated Voltage | 200V |
Compliance
| RoHS | Compliant |
Datasheet
No datasheet is available for this part.