Ixys
IXFN100N10S1
Power Field-Effect Transistor, 100A I(D), 100V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4
PackageSOT-227-4
MountingChassis Mount
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Technical Specifications
Ixys IXFN100N10S1 technical specifications.
General
Package/Case
SOT-227-4
Continuous Drain Current (ID)
100A
Drain to Source Voltage (Vdss)
100V
Input Capacitance
4.5nF
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
360W
Mount
Chassis Mount
Packaging
Rail/Tube
Rds On Max
15mR
RoHS Compliant
Yes
Series
HiPerFET™
Compliance
RoHS
Compliant
Datasheet
Ixys IXFN100N10S1 Datasheet
Download the complete datasheet for Ixys IXFN100N10S1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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