The IXFN100N10S3 is a high-power MOSFET with a maximum operating temperature range of -40°C to 150°C. It features a maximum power dissipation of 360W and a maximum drain to source voltage of 100V. The device has a continuous drain current rating of 100A and an on-resistance of 15mR. It is packaged in a SOT-227-4 package and is RoHS compliant.
PackageSOT-227-4
MountingChassis Mount
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Technical Specifications
Ixys IXFN100N10S3 technical specifications.
General
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Voltage (Vdss) | 100V |
| Input Capacitance | 4.5nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 360W |
| Mount | Chassis Mount |
| Packaging | Rail/Tube |
| Rds On Max | 15mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFN100N10S3 Datasheet
Download the complete datasheet for Ixys IXFN100N10S3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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