N-Channel Power MOSFET featuring 300V drain-source breakdown voltage and 88A continuous drain current. Offers a low 33mΩ drain-source on-resistance. Designed for chassis or panel mounting in a SOT-227-4 package, this silicon Metal-oxide Semiconductor FET supports up to 600W power dissipation and operates from -55°C to 150°C. Includes fast switching characteristics with a 30ns turn-on delay.
PackageSOT-227-4
MountingChassis Mount, Panel
PolarityN-CHANNEL
Power600W
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Technical Specifications
Ixys IXFN102N30P technical specifications.
General
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 88A |
| Drain to Source Breakdown Voltage | 300V |
| Drain to Source Resistance | 33mR |
| Drain to Source Voltage (Vdss) | 300V |
| Drain-source On Resistance-Max | 33MR |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.6mm |
| Input Capacitance | 7.5nF |
| Lead Free | Lead Free |
| Length | 38.23mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 600W |
| Mount | Chassis Mount, Panel |
| Package Quantity | 10 |
| Packaging | Box |
| Polarity | N-CHANNEL |
| Power Dissipation | 600W |
| Rds On Max | 33mR |
| RoHS Compliant | Yes |
| Series | PolarHV™ |
| Turn-Off Delay Time | 130ns |
| Turn-On Delay Time | 30ns |
| Width | 25.42mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFN102N30P Datasheet
Download the complete datasheet for Ixys IXFN102N30P to view detailed technical specifications.
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