N-Channel Power MOSFET featuring 200V drain-source breakdown voltage and 106A continuous drain current. This single-element silicon FET offers a low 20mΩ drain-source on-resistance. Designed for chassis mounting with a screw terminal, it operates within a -55°C to 150°C temperature range and boasts a maximum power dissipation of 521W. The component is RoHS compliant and lead-free, packaged in a SOT-227-4 MINIBLOC plastic case.
PackageSOT-227-4
Current Rating106A
MountingChassis Mount, Screw
PolarityN-CHANNEL
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Technical Specifications
Ixys IXFN106N20 technical specifications.
General
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 106A |
| Current Rating | 106A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 20mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 20MR |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 9nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 521W |
| Mount | Chassis Mount, Screw |
| Number of Elements | 1 |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 520W |
| Radiation Hardening | No |
| Rds On Max | 20mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 75ns |
| DC Rated Voltage | 200V |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFN106N20 Datasheet
Download the complete datasheet for Ixys IXFN106N20 to view detailed technical specifications.
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