N-Channel Power MOSFET, 600V Vdss, 90A Continuous Drain Current. Features 56mR Rds On, 1.5kW Max Power Dissipation, and 11ns Fall Time. Designed for chassis or panel mounting with a SOT-227-4 package. Operating temperature range from -55°C to 150°C.
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Ixys IXFN110N60P3 technical specifications.
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 90A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 56mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.6mm |
| Input Capacitance | 18nF |
| Lead Free | Lead Free |
| Length | 38.23mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.5kW |
| Mount | Chassis Mount, Panel, Screw |
| Number of Elements | 1 |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.5kW |
| Rds On Max | 56mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™, Polar3™ |
| Turn-Off Delay Time | 77ns |
| Turn-On Delay Time | 63ns |
| Width | 25.07mm |
| RoHS | Compliant |
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