N-Channel Power MOSFET featuring 300V drain-source breakdown voltage and 115A continuous drain current. Offers a low 24mΩ drain-source on-resistance and 700W maximum power dissipation. Designed for chassis or panel mounting in a SOT-227-4 package, this silicon Metal-oxide Semiconductor FET operates from -55°C to 150°C. Key switching characteristics include a 30ns turn-on delay and 20ns fall time.
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| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 115A |
| Drain to Source Breakdown Voltage | 300V |
| Drain to Source Resistance | 24mR |
| Drain to Source Voltage (Vdss) | 300V |
| Drain-source On Resistance-Max | 24mR |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.6mm |
| Input Capacitance | 14.8nF |
| Lead Free | Lead Free |
| Length | 38.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 700W |
| Mount | Chassis Mount, Panel |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 700W |
| Rds On Max | 24mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | Polar™ |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 100ns |
| Turn-On Delay Time | 30ns |
| Width | 25.07mm |
| RoHS | Compliant |
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